Diode for Nitride Semiconductor Blue Lasers- myassignmenthelp

Question: Discuss about theDiode for Nitride Semiconductor Blue Lasers. Answer: Diode is an electronic device that is supposedly two dimensional in nature. This property of diode ensured that there is flow of current in one direction only. This property of diode makes them unidirectional in nature (Grundmann, 2015). The basic purpose of the diodes is to rectify the waveforms that are in the present in the radio detectors or are present in the power supplies. Diodes finds there importance in the circuits where the requirements of the circuits are to flow the current only in one direction. Laser diodes has been one of the most important diode is used in the market due t its application. Laser diode Laser diode is the semiconductor laser that highly resembles with the light emitting diode. Dr. Robert Hall invented the ladser diode in the year 1962. The diodes main function is to emit laser beam form by bouncing the photons and putting it in the oscillatory motion (Chichibu and Nakamura, 2014). The bounce of the photon is made in between the positive and the negative type semiconductor that is kept at a distance of one micrometer. This technology uses process same as the conventional lasers. This used to pump the photons repetitively in between two mirror slices, which emitted laser beam of light. Laser diode is a forward biased diode, which has two carriers namely the holes and the electrons. The forward biasing done in the diodes enables the electron and the hole are pumped on to the opposite side of the p-n junction into the depleted side of the diode that has charge carriers present. Due to the fact of injecting the charged particles for the flow of charge it is known as the injection laser diodes. Working The working of the laser diode requires three main steps, they are namely: - Energy absorption The laser diode basically has a p-n junction in which the holes of the diode and the electrons of the diode dwells. Holes is nothing but the absence of the electron in the diode is termed as the holes. When a particular voltage is applied to the p-n junction, the injected en energy is absorbed by the negatively charged electron which gets charged up and the transition process begins. This transition takes the electron to the higher level. The electron that move to the higher level stay their without combining with the holes for few nano seconds. Spontaneous emission After the electrons complete the lifeline of staying in the upper level without combining with the holes the electrons fall apart t the lower energy level the energy that is released during the electron the fell from the higher energy level produces the charge of the photon (Petermann, 2018). This process of producing the electron radiation is also used for the production of light in light emission diodes. The energy that is transferred to the photon is due to the energy level differences. Stimulated emission Coherent photons more than one are needed from the laser diode for this process than that of the spontaneous emission process. Two mirror are placed in the either sides of the p-n junction this ensured that the charge gets strides in the process (Ghafouri-Shiraz, 2016). This causes the fact of combination of the electron with the holes due to the charge that has been produced by the photon. When the concentration level reaches the threshold level the bright monochromatic light is produced. Application of Laser diode Laser diode are used for the application in the field of industry as well as in the field of life science and instrumentation industries. Industrial applications- the usage of laser diode is used for the case of dental medication and diagnosing cancer cells. Telecom communication- In the telecom field 1.3 m and 1.55 m band, laser diodes are used as the main source of light for the silica fiber. Construction The construction of the laser diode is the same as that of the light emitting diode. The construction of the diode is very simplified in nature. Gallium arsenide, which is pure in n nature, is doped with the selenium, aluminum (Ross, 2015). Same results are expected even when the pure form of Gallium arsenide is dope with the silicon. This doping is used to create a p-type and n-type semiconductor material (Kearney, Metrologic Instruments Inc, 2014). Despite the fact of doping the un doped intrinsic layer of gallium is placed by the methodology of sandwiching the layers in between the P-N junctions. This is the layer where the laser light is produced. Figure: Construction of Laser diode Reference Chichibu, S.F. and Nakamura, S., 2014.Introduction to nitride semiconductor blue lasers and light emitting diodes. CRC Press. Ghafouri-Shiraz, H., 2016.Fundamentals of laser diode amplifiers. J. Wiley, Grundmann, M., 2015.The Physics of Semiconductors: An Introduction Including Nanophysics and Applications. Springer. Kearney, S.P., Metrologic Instruments Inc, 2014.Method of and apparatus for multiplying raster scanning lines by modulating a multi-cavity laser diode. U.S. Patent 8,678,285. Petermann, K., 2018.Laser diode modulation and noise(Vol. 3). Springer Science Business Media. Ross, M., 2015. YAG laser operation by semiconductor laser pumping.Proceedings of the IEEE,56(2), pp.196-197.